| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,740 pcs
|
1740 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI3805DV-T1-GE3 is a P-Channel MOSFET designed for power applications. It offers a drain-source voltage of 20V and a continuous drain current of 3.3A at 25°C case temperature.
Key electrical characteristics include a maximum on-state resistance of 84mOhm at a gate-source voltage of 10V and a drain current of 3A. The device also incorporates a Schottky diode, providing isolation and improved performance.
This MOSFET is housed in a SOT-23-6 Thin, TSOT-23-6 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C.
The SI3805DV-T1-GE3 is RoHS3 compliant and Halogen-free, making it suitable for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 20V.
The maximum continuous drain current is 3.3A at 25°C case temperature.
The on-state resistance is 84mOhm at a drain current of 3A and gate-source voltage of 10V.
The operating temperature range is -55°C to 150°C.
It is supplied in a SOT-23-6 Thin, TSOT-23-6 package.
Yes, it is RoHS3 Compliant.
Yes, it features an isolated Schottky Diode.