| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,030 pcs
|
7030 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI3590DV-T1-GE3 is a dual N- and P-channel MOSFET designed for high efficiency applications. It features TrenchFET power MOSFET technology for ultra low Rds(on) and minimized conduction losses.
The device has a drain-source voltage rating of 30V. The N-channel offers a continuous drain current of 3A with a maximum Rds(on) of 77mOhm at 3A and 4.5V Vgs. The P-channel offers a continuous drain current of -2A with a maximum Rds(on) of 170mOhm at -2A and -4.5V Vgs.
It is packaged in a 6-TSOP (SOT-23-6 Thin) surface-mount package, suitable for portable devices. The operating temperature range is -55°C to 150°C.
Applications include portable devices such as PDAs, cellular phones, and pagers where high side/low side optimization and minimized conduction losses are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
-55°C to 150°C.
SOT-23-6 Thin, TSOT-23-6, and 6-TSOP supplier package.
77 mOhm maximum at Id = 3A and Vgs = 4.5V.
4.5 nC typical at Vgs = 4.5V.
1.5V maximum at Id = 250µA.
3A for N-channel and -2A for P-channel at 25°C.