| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
311,000 pcs
|
311000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
406 pcs
|
406 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI3590DV-T1-E3 is a dual N- and P-channel MOSFET array designed for high efficiency applications. It features TrenchFET power MOSFET technology, offering ultra low R DS(on) for minimized conduction losses.
Key electrical specifications include a 30V drain-source voltage and a typical R DS(on) of 77mOhm at 3A, 4.5V. The gate charge is typically 4.5nC at 4.5V. The device is optimized for high-side and low-side applications.
This MOSFET array is housed in a compact 6-TSOP (SOT-23-6 Thin) surface-mount package. It operates within a temperature range of -55°C to 150°C (TJ). The device is suitable for portable devices including PDAs, cellular phones, and pagers.
Environmental compliance includes RoHS3, REACH Unaffected, and Halogen Free status. The MSL is rated at 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30V.
The typical on-resistance is 77mOhm at 3A, 4.5V.
The maximum gate charge is 4.5nC at 4.5V.
The operating junction and storage temperature range is -55°C to 150°C.
It is supplied in a 6-TSOP package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.