SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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1,117 pcs
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1117 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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The Vishay SI3588DV-T1 is a P-channel MOSFET housed in a TSOP-6 package. This component offers a drain-source voltage (Vds) of 20V and a maximum continuous drain current (Id) of 3A. Its on-resistance (Rds(on)) is specified at 80 MOhm when measured at a gate-source voltage (Vgs) of 4.5V. The typical threshold voltage (Vgs Typ) is 450mV, and the maximum gate-source voltage is also 450mV.
With a power dissipation (Pd) of 830mW, this MOSFET operates within an ambient temperature range of -55°C to +150°C. The TSOP-6 package is suitable for surface mounting.
This MOSFET is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1. It is designed for applications requiring efficient switching and power control within its specified voltage and current ratings.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 20V.
The maximum continuous drain current (Id) is 3A.
The on-resistance (Rds(on)) is 80 MOhm at a Vgs of 4.5V.
The operating temperature range is -55°C to +150°C.
The SI3588DV-T1 is in a TSOP-6 package.
