| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
660 pcs
|
660 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
390 pcs
|
390 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI3585DV-T1-E3 from Vishay Dale is a versatile N/P-Channel MOSFET designed for a wide range of electronic applications. It offers a drain-to-source voltage (Vdss) of 20V and supports continuous drain currents of up to 2A for the N-channel and 1.5A for the P-channel. The MOSFET operates with a logic level gate, indicated by a gate threshold voltage (Vgs(th)) of 600mV at 250µA.
This component is housed in a compact SOT-23-6 Thin, TSOT-23-6 package, making it suitable for space-constrained designs. Its surface mount type facilitates easy integration into printed circuit boards. The operating temperature range is -55°C to 150°C (TJ), and it has a power dissipation rating of 830mW. The on-resistance (Rds On) is a maximum of 125mOhm at 2.4A and 4.5V, with a gate charge (Qg) of 3.2nC at 4.5V.
The SI3585DV-T1-E3 is RoHS3 compliant, ensuring adherence to environmental regulations. Its robust construction and electrical characteristics make it a reliable choice for power management and switching applications in various electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
It is available in a SOT-23-6 Thin and TSOT-23-6 surface mount package.
The operating temperature range is -55°C to 150°C (junction).
The continuous drain current is 2A for the N-channel and 1.5A for the P-channel.
The maximum on-resistance is 125mOhm at 2.4A drain current and 4.5V gate voltage.
The maximum gate threshold voltage is 600mV at 250µA drain current.
The maximum power dissipation is 830mW.