| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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215,238 pcs
|
215238 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10,020 pcs
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10020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,667 pcs
|
3667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
270 pcs
|
270 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Transistor Type | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI3585CDV-T1-GE3 is a dual N- and P-channel MOSFET designed for applications requiring efficient switching. It offers a 20V drain-source breakdown voltage and supports logic-level gate operation.
The MOSFET provides a maximum continuous drain current of 3.9A for the N-channel and 2.1A for the P-channel at 25°C. Its on-resistance is as low as 58mOhm at 2.5A, 4.5V for the N-channel, and 195mOhm at 2.1A, -4.5V for the P-channel. The device operates within a temperature range of -55°C to 150°C.
Packaged in a compact 6-TSOP (SOT-23-6 Thin) surface-mount package, the SI3585CDV-T1-GE3 is suitable for space-constrained designs. It is constructed using Silicon (Si) technology and features TrenchFET technology for enhanced performance.
Key electrical characteristics include a gate threshold voltage of up to 1.5V and a gate charge of 4.8nC maximum. The device is RoHS3 compliant and Halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 20V for both N and P-Channels.
The maximum continuous drain current for the N-Channel is 3.9A at a case temperature of 25°C.
The maximum on-resistance for the N-Channel is 58mOhm at VGS = 4.5V and ID = 2.5A.
The operating junction temperature range is -55°C to 150°C.
It is available in a TSOP-6 surface mount package.
The datasheet indicates the device is Lead (Pb)-free and Halogen-free.