SI3552DV-T1-GE3 The Vishay Dale SI3552DV-T1-GE3 is an N- and P-channel MOSFET array in a 6-TSOP package. It offers a 30V drain-source voltage and a maximum Rds On of 105mOhm.
Mfr Part #:

SI3552DV-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3552DV-T1-GE3 is an N- and P-channel MOSFET array in a 6-TSOP package. It offers a 30V drain-source voltage and a maximum Rds On of 105mOhm.
✓ Total Stock: 230,324 pcs
$ Price Range: $0.99

SI3552DV-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
226,020 pcs
226020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,304 pcs
4304 pcs On Request 1 On Request On Request 1421+ On Request On Request

SI3552DV-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SI3552DV-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI3552DV-T1-GE3 is a dual N- and P-channel power MOSFET array designed for various applications. It features a TrenchFET power MOSFET technology and is 100% Rg tested.

 

Key electrical characteristics include a 30V drain-source voltage rating. The N-channel MOSFET has a maximum Rds On of 105mOhm at 2.5A and 10V Vgs, while the P-channel MOSFET has a maximum Rds On of 200mOhm at -1.8A and -10V Vgs. The gate charge (Qg) is typically 2.1nC for the N-channel and 2.4nC for the P-channel at 10V Vgs.

 

This device operates within a junction temperature range of -55°C to 150°C. It is housed in a compact 6-TSOP (SOT-23-6 Thin) surface-mount package, making it suitable for space-constrained designs. The maximum power dissipation is rated at 1.15W at 25°C ambient temperature.

 

Compliance information indicates RoHS3 compliance and an MSL 1 rating. The device is designed for efficient power management and switching applications.

SI3552DV-T1-GE3 Quick Information

Product Type: MOSFET Array
Canonical Name: N- and P-Channel 30 V (D-S) MOSFET
Subcategory: Array

SI3552DV-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3552DV-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3552DV-T1-GE3 Features

  • N- and P-channel MOSFET array.
  • 30V drain-source voltage rating.
  • Low Rds On for efficient operation.
  • Compact TSOP-6 surface mount package.
  • Logic Level Gate compatible.

SI3552DV-T1-GE3 Applications

  • Ideal for power switching circuits.
  • Suitable for load management tasks.
  • Used in battery powered devices.
  • Applicable in portable electronics.
  • Efficient for DC-DC conversion.

SI3552DV-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain to source voltage rating of SI3552DV-T1-GE3?

30V.

What is the operating temperature range of SI3552DV-T1-GE3?

-55°C to 150°C.

What package is SI3552DV-T1-GE3 available in?

SOT-23-6 Thin, TSOT-23-6 (6-TSOP supplier package).

Is the SI3552DV-T1-GE3 a single or dual MOSFET?

It is a dual MOSFET containing one N-channel and one P-channel transistor.

What is the typical on-resistance of the N-channel MOSFET?

105 mOhm at Vgs = 10V, Id = 2.5A.

What is the gate threshold voltage for the N-channel MOSFET?

1V at Id = 250 µA (Vds = Vgs).

What is the maximum continuous drain current at 25°C?

2.5A for the N-channel MOSFET.

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