SI3552DV-T1-E3 The Vishay Dale SI3552DV-T1-E3 is a MOSFET array featuring N and P-channel transistors. It offers a 30V drain-source voltage and a 2.5A continuous drain current.
Mfr Part #:

SI3552DV-T1-E3

Available from 7 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3552DV-T1-E3 is a MOSFET array featuring N and P-channel transistors. It offers a 30V drain-source voltage and a 2.5A continuous drain current.
✓ Total Stock: 22,534 pcs
$ Price Range: $0.99

SI3552DV-T1-E3 Available from 7 distributors

✓ Authorised
✓ Non-Authorised

SI3552DV-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI3552DV-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI3552DV-T1-E3 is a dual MOSFET array comprising both N-channel and P-channel transistors. It is designed for applications requiring a 30V drain-source breakdown voltage and can handle a continuous drain current of up to 2.5A for the N-channel and -1.8A for the P-channel at 25°C.

 

This MOSFET array features a low Rds(on) of 105mOhm at 2.5A and 10V for the N-channel, and 200mOhm at 1.8A and 10V for the P-channel. The typical gate charge is 2.1nC for the N-channel and 2.4nC for the P-channel. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1.15W at 25°C.

 

The device is housed in a compact TSOP-6 package, suitable for surface mounting. Its TrenchFET power MOSFET technology and 100% Rg tested status indicate robust performance characteristics. The device is also RoHS3 compliant and has an MSL rating of 1.

SI3552DV-T1-E3 Quick Information

Product Type: MOSFET Array
Canonical Name: Vishay Dale SI3552DV-T1-E3 N- and P-Channel MOSFET
Subcategory: N and P-Channel

SI3552DV-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI3552DV-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3552DV-T1-E3 Features

  • N and P-Channel MOSFET array
  • 30V Drain-Source Voltage
  • 2.5A Continuous Drain Current
  • 1.15W Power Dissipation
  • TSOP-6 Surface Mount Package

SI3552DV-T1-E3 Applications

  • Dual N/P-channel switching
  • Power management circuits
  • General purpose MOSFET applications
  • Compact electronic designs

SI3552DV-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI3552DV-T1-E3?

The drain-source voltage (Vdss) is 30V.

What is the gate-source voltage rating?

The gate-source voltage (Vgs) is ±20V.

What is the continuous drain current at 25°C?

The continuous drain current is 2.5A at 25°C.

What is the RDS(on) at 10V?

The maximum RDS(on) is 105mOhm at 2.5A, 10V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package does the SI3552DV-T1-E3 come in?

It comes in a TSOP-6 surface mount package (6-TSOP).

What is the gate charge?

The maximum gate charge (Qg) is 3.2nC at 5V.

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