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SI3552DV The Vishay SI3552DV-T1-E3 is a MOSFET array featuring N and P-channel transistors. It is designed for surface mount applications in a TSOP-6 package.
Mfr Part #:

SI3552DV

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay SI3552DV-T1-E3 is a MOSFET array featuring N and P-channel transistors. It is designed for surface mount applications in a TSOP-6 package.
✓ Total Stock: 120,533 pcs
$ Price Range: $2.81

SI3552DV Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
120,533 pcs
On Request
120533 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SI3552DV Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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SI3552DV Description

Short technical summary and product information.

The Vishay SI3552DV-T1-E3 is a dual N-channel and P-channel MOSFET array. It offers a drain-source breakdown voltage of 30V and a continuous drain current of 2.5A.

 

This component is suitable for surface mount applications and comes in a TSOP-6 package. It operates within a temperature range of -55C to +150C. The typical Rds On values are 105 Mohms for the N-channel and 175 Mohms for the P-channel.

 

Key electrical characteristics include a gate-source breakdown voltage of 20V and a power dissipation of 1.15W. The typical turn-off delay times are 13 ns for the N-channel and 12 ns for the P-channel.

SI3552DV Quick Information

Product Type: MOSFET Array
Canonical Name: SI3552DV-T1-E3 N and P-Channel MOSFET Array
Subcategory: MOSFET Array

SI3552DV Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3552DV Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3552DV Features

  • Dual N and P-Channel MOSFET array.
  • 30V Drain-Source Breakdown Voltage.
  • 2.5A Continuous Drain Current.
  • Surface mount TSOP-6 package.
  • Wide operating temperature range.

SI3552DV Applications

  • Ideal for power management circuits.
  • Suitable for battery operated devices.
  • Used in portable electronics.
  • Applications requiring complementary MOSFETs.

SI3552DV FAQs

7 frequently asked questions generated from this part’s specifications.
What type of transistor is the SI3552DV-T1-E3?

The SI3552DV-T1-E3 is a MOSFET array with N and P-channel transistors.

What is the continuous drain current for the SI3552DV-T1-E3?

The continuous drain current is 2.5 A.

What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 30 V.

What is the operating temperature range?

The operating temperature range is from -55 C to +150 C.

What package type is the SI3552DV-T1-E3 in?

The SI3552DV-T1-E3 is in a TSOP-6 package.

How is the SI3552DV-T1-E3 mounted?

It is a surface mount device.

What is the RoHS status?

The RoHS status is RoHS3 Compliant.

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