SI3493DDV-T1-GE3 The Vishay Dale SI3493DDV-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage rating and 8A continuous current capability. It is supplied in a SOT-23-6 Thin package.
Mfr Part #:

SI3493DDV-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3493DDV-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage rating and 8A continuous current capability. It is supplied in a SOT-23-6 Thin package.
✓ Total Stock: 7,984 pcs
$ Price Range: $0.99

SI3493DDV-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
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Non-Authorised Inventory information
7,020 pcs
7020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
964 pcs
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SI3493DDV-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3493DDV-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI3493DDV-T1-GE3 is a P-Channel power MOSFET designed for applications requiring efficient switching and power management. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 8A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance (Rds On) of 24mOhm at 7.5A and 4.5V gate-source voltage, and a typical gate charge (Qg) of 19.8nC. The gate threshold voltage (Vgs(th)) is 1V at 250µA.

 

This MOSFET is housed in a SOT-23-6 Thin (TSOT-23-6) surface-mount package, making it suitable for compact designs. The operating temperature range is -55°C to 150°C (TJ).

 

Applications include battery management in mobile devices, battery switches, load switches, and PA switches.

SI3493DDV-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 20 V (D-S) MOSFET
Subcategory: P-Channel

SI3493DDV-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI3493DDV-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3493DDV-T1-GE3 Features

  • P-Channel 20V power MOSFET.
  • Low on-resistance of 24mOhm at 7.5A.
  • Typical gate charge is 19.8nC.
  • Surface mount SOT-23-6 Thin package.
  • Suitable for battery and load switching.

SI3493DDV-T1-GE3 Applications

  • Used in battery management systems.
  • Functions as a battery switch.
  • Ideal for load switching applications.
  • Applicable for PA switch circuits.

SI3493DDV-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SI3493DDV-T1-GE3?

-20 V

What is the continuous drain current rating?

-8 A at TC = 25 °C

What package type is this MOSFET available in?

SOT-23-6 Thin (TSOT-23-6)

What is the operating temperature range?

-55°C to 150°C

What is the gate threshold voltage?

1 V maximum at Id = 250 µA

What is the typical on-resistance?

24 mOhm maximum at Id = 7.5 A, Vgs = 4.5 V

What is the maximum gate charge?

30 nC at Vgs = 4.5 V

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