| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7,020 pcs
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7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SI3493BDV-T1-GE3 is a P-Channel MOSFET designed for various switching applications. It features a drain-source breakdown voltage of 20V and a continuous drain current of up to 8A at 25°C case temperature.
This MOSFET offers a low on-state resistance (Rds(on)) of 27.5mΩ at 7A and 4.5V Vgs, making it suitable for applications requiring efficient power handling. The gate-source voltage range is ±8V, with a threshold voltage of 900mV at 250µA.
Packaged in a compact 6-TSOP (SOT-23-6 Thin) surface-mount package, the SI3493BDV-T1-GE3 operates within a junction temperature range of -55°C to 150°C. It is also halogen-free, compliant with RoHS Directive 2002/95/EC, and meets IEC 61249-2-21 definition.
Key electrical characteristics include an input capacitance of 1805pF and a gate charge of 43.5nC. The device is optimized for PWM applications and is 100% R_g tested.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-20 V (minimum) at VGS = 0 V, ID = -250 µA.
It is available in SOT-23-6 Thin, TSOT-23-6 package, also known as 6-TSOP, surface mount.
-55°C to 150°C (junction temperature).
8A at case temperature 25°C, 7A at ambient 25°C.
27.5 mOhm maximum at VGS = -4.5V, ID = -7A; 34 mOhm at VGS = -2.5V; 45 mOhm at VGS = -1.8V.
900 mV maximum at VDS = VGS, ID = -250 µA.
1805 pF maximum at VDS = 10V.