SI3493BDV-T1-E3 The Vishay Dale SI3493BDV-T1-E3 is a P-Channel MOSFET designed for power switching applications. It features a 20V drain-source voltage and a continuous drain current of 8A.
Mfr Part #:

SI3493BDV-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3493BDV-T1-E3 is a P-Channel MOSFET designed for power switching applications. It features a 20V drain-source voltage and a continuous drain current of 8A.
✓ Total Stock: 405,833 pcs
$ Price Range: $0.99

SI3493BDV-T1-E3 Available from 3 distributors

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SI3493BDV-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3493BDV-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI3493BDV-T1-E3 is a P-Channel MOSFET with a drain-source breakdown voltage of 20V. It is designed for efficient power switching, offering a continuous drain current of up to 8A at 25°C case temperature.

 

This MOSFET exhibits a low on-resistance, with a maximum of 27.5mΩ at a gate-source voltage of -4.5V and a drain current of 7A. The gate-source threshold voltage is a maximum of 900mV at 250µA. Its input capacitance is rated at 1805pF at 10V.

 

The device operates within a junction temperature range of -55°C to 150°C. It is housed in a compact 6-TSOP package, suitable for surface mounting. The maximum power dissipation is 2.97W when measured at the case temperature of 25°C, and 2.08W when measured at an ambient temperature of 25°C.

 

Key features include its P-Channel configuration, TrenchFET technology, and PWM optimization. It is also compliant with RoHS Directive 2002/95/EC and is halogen-free.

SI3493BDV-T1-E3 Quick Information

Product Type: MOSFET
Series: SI3493
Canonical Name: Vishay Dale Si3493BDV P-Channel 20V 8A MOSFET
Subcategory: P-Channel

SI3493BDV-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI3493BDV-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3493BDV-T1-E3 Features

  • P-Channel 20V MOSFET for power switching.
  • Low on-resistance of 27.5mΩ max at 7A.
  • Surface mountable 6-TSOP package.
  • Wide operating temperature range of -55°C to 150°C.
  • Halogen-free and RoHS compliant.

SI3493BDV-T1-E3 Applications

  • Ideal for load switch applications.
  • Suitable for PA switch circuits.
  • Effective for battery switch functions.
  • Designed for PWM optimized circuits.

SI3493BDV-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the SI3493BDV-T1-E3?

The maximum continuous drain current is 8A at a case temperature of 25°C.

What is the drain-source breakdown voltage of the SI3493BDV-T1-E3?

The drain-source breakdown voltage is 20V.

What is the maximum on-resistance for the SI3493BDV-T1-E3?

The maximum on-resistance is 27.5mΩ at a gate-source voltage of -4.5V and a drain current of 7A.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to 150°C.

What package type is the SI3493BDV-T1-E3 supplied in?

It is supplied in a 6-TSOP package suitable for surface mounting.

Is the SI3493BDV-T1-E3 RoHS compliant?

Yes, it is RoHS3 Compliant.

Is this MOSFET halogen-free?

Yes, it is halogen-free.

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