SI3483DV-T1-E3 The Vishay Dale SI3483DV-T1-E3 is a P-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 4.7A. It features a low Rds(on) of 35mOhm at 10V Vgs.
Mfr Part #:

SI3483DV-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3483DV-T1-E3 is a P-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 4.7A. It features a low Rds(on) of 35mOhm at 10V Vgs.
✓ Total Stock: 689 pcs
$ Price Range: $0.99

SI3483DV-T1-E3 Available from 1 distributor

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✓ Non-Authorised
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689 pcs
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SI3483DV-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3483DV-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI3483DV-T1-E3 is a P-Channel MOSFET designed for load switch applications. It offers a drain-source voltage of 30V and a continuous drain current of 4.7A at 25°C ambient temperature.

 

Key electrical characteristics include a maximum Rds(on) of 35mOhm at 6.2A and 10V Vgs, and a gate threshold voltage of 3V maximum at 250µA. The device operates within a temperature range of -55°C to 150°C.

 

Packaged in a compact SOT-23-6 Thin (TSOT-23-6) surface-mount package, this MOSFET is suitable for space-constrained designs. It is RoHS3 compliant and Halogen-free, meeting environmental standards.

 

This component is ideal for various switching applications where efficient power control is required.

SI3483DV-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 30V MOSFET
Subcategory: P-Channel

SI3483DV-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3483DV-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3483DV-T1-E3 Features

  • P-Channel 30V MOSFET
  • Low Rds(on) of 35mOhm
  • Surface mount SOT-23-6 package
  • RoHS3 Compliant and Halogen-free
  • Designed for load switch applications

SI3483DV-T1-E3 Applications

  • Ideal for load switching
  • Suitable for power management
  • Used in compact electronic designs
  • Efficient current control applications

SI3483DV-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the SI3483DV-T1-E3?

The drain-source voltage rating is 30V.

What is the maximum continuous drain current for this MOSFET?

The maximum continuous drain current is 4.7A at 25°C ambient temperature.

What is the Rds(on) of the SI3483DV-T1-E3 at 10V Vgs?

The Rds(on) is a maximum of 35mOhm at 6.2A and 10V Vgs.

What is the operating temperature range for this component?

The operating temperature range is -55°C to 150°C.

What package type is the SI3483DV-T1-E3 supplied in?

It is supplied in a SOT-23-6 Thin, TSOT-23-6 package.

Is the SI3483DV-T1-E3 RoHS compliant?

Yes, it is RoHS3 Compliant.

Is the SI3483DV-T1-E3 Halogen-free?

Yes, it is Halogen-free.

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