| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
547,879 pcs
|
547879 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
142 pcs
|
142 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI3483CDV-T1-GE3 is a P-Channel enhancement-mode MOSFET from Vishay Dale, designed for efficient power management in space-constrained applications. It features a drain-source breakdown voltage of -30 V and a continuous drain current rating of -8 A at a case temperature of 25 °C. The device offers a low maximum on-resistance of 0.034 Ω at VGS = -10 V and 0.053 Ω at VGS = -4.5 V, enabling high efficiency in switching circuits.
This MOSFET is housed in a compact 6-TSOP surface-mount package (SOT-23-6 Thin, TSOT-23-6), making it suitable for portable and high-density designs. It supports a wide operating junction temperature range from -55 °C to +150 °C. The device is lead-free and halogen-free per the datasheet.
Typical gate charge is 11.5 nC at VGS = -10 V, and maximum input capacitance is 1000 pF at VDS = 15 V, allowing for moderate switching speeds. The maximum power dissipation is 4.2 W at TC = 25 °C and 2 W at TA = 25 °C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is -30 V at VGS = 0 V and ID = -250 μA.
The maximum continuous drain current is -8 A at TC = 25 °C, -7 A at TC = 70 °C, -6.1 A at TA = 25 °C, and -4.9 A at TA = 70 °C.
The maximum on-resistance is 0.034 Ω at VGS = -10 V and 0.053 Ω at VGS = -4.5 V.
The operating junction and storage temperature range is -55 °C to +150 °C.
It is available in a SOT-23-6 Thin, TSOT-23-6 surface-mount package (6-TSOP).
The maximum gate threshold voltage is 3 V at ID = -250 μA.
Maximum power dissipation is 4.2 W at TC = 25 °C and 2 W at TA = 25 °C.