| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
547,879 pcs
|
547879 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI3477DV-T1-GE3 is a P-Channel Power MOSFET featuring TrenchFET technology, optimized for PWM applications. It offers a Drain-Source Voltage (VDS) of 12V and a maximum continuous drain current (ID) of 8A at 25°C case temperature.
Key electrical characteristics include a low on-resistance (RDS(on)) of 17.5mOhm at 9A and 4.5V VGS. The device has a Gate-Source Voltage (VGS) rating of ±10V and a Gate Charge (Qg) of 90nC typical at 10V VGS. It also features an input capacitance (Ciss) of 2600pF at 6V VDS.
This MOSFET is housed in a 6-TSOP package, suitable for surface mounting. It operates within a temperature range of -55°C to +150°C (TJ). The device is RoHS3 compliant and halogen-free.
Applications include load switching and DC/DC converters, where its performance and package size are advantageous.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is -12V at VGS = 0V and ID = -250µA.
The maximum continuous drain current is -8A at a case temperature of 25°C.
The maximum on-resistance is 17.5mOhm at VGS = -4.5V and ID = 9A.
The operating junction temperature range is -55°C to +150°C.
It comes in a surface mount SOT-23-6 Thin / TSOT-23-6 package, also designated as 6-TSOP.
The maximum gate threshold voltage is 1V at ID = 250µA.
The maximum power dissipation is 4.2W at a case temperature of 25°C.