| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
602,667 pcs
|
602667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
28,020 pcs
|
28020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI3476DV-T1-GE3 is an N-channel enhancement-mode MOSFET from Vishay, designed for medium-voltage switching applications. It features a minimum drain-source breakdown voltage of 80V with a continuous drain current rating of 4.6A, making it suitable for power management and load switching in compact designs.
The device comes in a 6TSOP (Thin Small Outline Package) surface-mount package, ideal for space-constrained PCBs. The gate-source voltage maximum rating is specified in the datasheet. This MOSFET is commonly used in DC-DC converters, battery protection circuits, and other low-voltage power systems where efficient switching is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 80 V at VGS = 0 V, ID = 250 µA.
The device is offered in a 6TSOP surface-mount package.