| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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516,571 pcs
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516571 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SI3475DV-T1-E3 is a P-Channel MOSFET designed for power switching applications. It offers a maximum drain-source voltage (Vdss) of 200V and a continuous drain current of 950mA at a case temperature (Tc).
This MOSFET has a low on-resistance (Rds On) of 1.61 Ohms at 900mA and 10V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 18nC and an input capacitance (Ciss) of 500pF. The gate threshold voltage (Vgs(th)) is 4V at 250µA, with a maximum gate-source voltage (Vgs) of ±20V.
Packaged in a SOT-23-6 Thin (TSOT-23-6) surface mount package, the SI3475DV-T1-E3 is suitable for space-constrained designs. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 3.2W at Tc or 2W at Ta.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. This component is ideal for various power management and switching circuits where a reliable P-channel MOSFET is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V maximum.
950mA at case temperature.
1.61Ohm maximum at 10V gate drive and 900mA.
-55°C to 150°C junction temperature.
SOT-23-6 Thin, TSOT-23-6 (6-TSOP).
4V maximum at 250µA.
18nC maximum at 10V.