| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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73,020 pcs
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73020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Vishay Siliconix SI3474DV-T1-GE3 is an N-Channel MOSFET designed for power management applications. It offers a 100V drain-source breakdown voltage and a maximum on-resistance of 126mOhm at a gate-source voltage of 10V and a drain current of 2A. The device can handle a continuous drain current of up to 3.8A at 25°C case temperature.
Key electrical characteristics include a gate charge of 10.4 nC maximum at 10V and an input capacitance of 196 pF maximum at 50V. The MOSFET operates within a temperature range of -55°C to 150°C.
Packaged in a 6-TSOP (SOT-23-6 Thin) surface-mount package, this component is suitable for applications such as DC/DC converters, load switches, and LED backlighting in LCD TVs. Its TrenchFET technology ensures high performance and efficiency.
The device has a maximum power dissipation of 3.6W at 25°C case temperature and a junction-to-ambient thermal resistance of 62.5°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
3.8A at a case temperature of 25°C.
126 mOhm maximum at 2A drain current and 10V gate-source voltage.
SOT-23-6 Thin (TSOT-23-6) surface-mount package.
-55°C to 150°C (junction temperature).
3V maximum at 250µA drain current.