| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36,000 pcs
|
36000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI3473DV-T1-GE3 is a P-Channel MOSFET designed for power switching applications. It offers a drain-source voltage (Vds) of 12V and a continuous drain current (Id) of up to 5.9A at 25°C ambient temperature. The MOSFET exhibits a low on-resistance, with a maximum of 23mOhm at a gate-source voltage (Vgs) of -4.5V and a drain current of 7.9A.
This device utilizes TrenchFET technology and is rated for 1.8V gate drive. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1.1W at 25°C. The MOSFET is housed in a compact 6-TSOP (SOT-23-6 Thin) surface-mount package, making it suitable for space-constrained designs.
Key features include a gate threshold voltage (Vgs(th)) of 1V at 250µA and a gate charge (Qg) of 33 nC at 4.5V. The SI3473DV-T1-GE3 is compliant with RoHS directives and is suitable for applications such as load switching and PA switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is -12V.
The continuous drain current is 5.9A at 25°C ambient temperature.
The maximum on-resistance is 23mΩ at Vgs = -4.5V and Id = -7.9A.
The device is available in a 6-TSOP package, which is also referred to as SOT-23-6 Thin.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 1V at Id = -250µA.
The maximum power dissipation is 1.1W at 25°C ambient temperature.