| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
189 pcs
|
189 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
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| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI3473DV-T1-E3 is a P-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It features a drain-source voltage (Vdss) of 12V and a continuous drain current of 5.9A. The device has a maximum gate-source voltage of ±8V and a gate threshold voltage of 1V at 250µA. This MOSFET is designed for low-voltage switching applications. It is housed in a 6TSOP surface-mount package, suitable for compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12V.
±8V.
1V at 250µA.