| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
258,286 pcs
|
258286 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI3473CDV-T1-E3 is a P-Channel TrenchFET power MOSFET optimized for PWM applications. It features a drain-source voltage (VDS) of 12V and a continuous drain current (ID) of 8A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (RDS(on)) of 22mOhm at 8.1A and 4.5V VGS. The gate charge (Qg) is typically 26nC. The device operates over a wide temperature range from -55°C to +150°C.
Packaged in a 6-TSOP (SOT-23-6 Thin) surface-mount package, this MOSFET is suitable for applications such as load switching and PA switching. Its thermal resistance is rated at 62.5°C/W junction-to-ambient under specific conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -12 V minimum at VGS = 0 V.
The maximum on-resistance is 22 mΩ at ID = 8.1 A and VGS = 4.5 V.
The device is available in a TSOP-6 surface-mount package (6-TSOP).
The operating junction and storage temperature range is -55°C to +150°C.
The maximum continuous drain current is -8 A at TC = 25°C.
The maximum power dissipation is 4.2 W at TC = 25°C.
On-resistance is 22 mΩ at 4.5V, 28 mΩ at 2.5V, and 36 mΩ at 1.8V gate drive.