| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
452,000 pcs
|
452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Mounting Type | |
| SVHC Present |
The Vishay Dale SI3473CDV is a P-Channel TrenchFET® power MOSFET with a drain-source voltage (VDS) of -12V. It is optimized for PWM applications and suitable for load and PA switching.
Key electrical characteristics include a maximum on-resistance (RDS(on)) of 0.022 Ω at VGS = -4.5V, and a typical gate charge (Qg) of 26 nC. The continuous drain current (ID) is rated at -8A.
This MOSFET is available in a TSOP-6 package and is designed for surface mounting. It operates within a junction temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -12 V.
The maximum gate-source voltage is ± 8 V.
The maximum continuous drain current is -8 A.
The maximum on-resistance is 0.022 Ω.
The typical gate charge is 26 nC.
The SI3473CDV is available in a TSOP-6 package.
The operating junction and storage temperature range is -55°C to +150°C.