SI3469DV-T1-E3 The Vishay Dale SI3469DV-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 5A. It features a low Rds(on) of 30mOhm at 10V gate-source voltage.
Mfr Part #:

SI3469DV-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3469DV-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 5A. It features a low Rds(on) of 30mOhm at 10V gate-source voltage.
✓ Total Stock: 6,549 pcs
$ Price Range: $0.99

SI3469DV-T1-E3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,600 pcs
4600 pcs On Request 1 On Request On Request 2018+ On Request On Request
Non-Authorised Inventory information
1,947 pcs
1947 pcs On Request 1 On Request On Request 1236+ On Request On Request
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2 pcs
2 pcs On Request 1 On Request On Request On Request On Request On Request

SI3469DV-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3469DV-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI3469DV-T1-E3 is a P-Channel TrenchFET Power MOSFET designed for load switch applications in notebook PCs, game machines, and desktops. It offers a drain-source voltage of 20V and a continuous drain current of up to 5A at 25°C ambient temperature.

 

Key electrical characteristics include a maximum Rds(on) of 30mΩ at 6.7A and 10V Vgs, and a gate threshold voltage of 3V at 250µA. The device operates within a temperature range of -55°C to 150°C.

 

Packaged in a 6-TSOP (SOT-23-6 Thin) surface-mount package, this MOSFET is suitable for compact designs. It is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

 

Applications include load switching and power management in portable electronic devices.

SI3469DV-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si3469DV P-Channel 20V TrenchFET Power MOSFET
Subcategory: P-Channel

SI3469DV-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3469DV-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3469DV-T1-E3 Features

  • P-Channel 20V TrenchFET Power MOSFET.
  • Low Rds(on) of 30mOhm at 10V Vgs.
  • Continuous drain current up to 5A.
  • Surface mount 6-TSOP package.
  • RoHS3 compliant and Halogen-free.

SI3469DV-T1-E3 Applications

  • Ideal for notebook PC load switching.
  • Suitable for game machine power management.
  • Used in desktop computer applications.
  • General purpose load switch.

SI3469DV-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI3469DV-T1-E3?

The drain-source voltage (Vdss) rating is 20 V.

What package does the SI3469DV-T1-E3 come in?

It comes in a SOT-23-6 Thin, TSOT-23-6 package (6-TSOP).

What is the operating temperature range of the SI3469DV-T1-E3?

The operating junction temperature range is -55°C to 150°C.

What is the gate threshold voltage of the SI3469DV-T1-E3?

The maximum gate threshold voltage is 3 V at a drain current of 250 µA.

What is the on-resistance of the SI3469DV-T1-E3?

The maximum on-resistance is 30 mΩ at a gate voltage of 10 V and drain current of 6.7 A.

What is the gate charge of the SI3469DV-T1-E3?

The typical gate charge is 30 nC at a gate voltage of 10 V.

What is the maximum continuous drain current of the SI3469DV-T1-E3?

The maximum continuous drain current is 6.7 A at 25°C ambient temperature.

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