| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60,267 pcs
|
60267 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | 939 | On Request | On Request | |
|
169 pcs
|
169 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI3460DV-T1-E3 is an N-Channel MOSFET belonging to the TrenchFET Power MOSFET family. It is designed for efficient power switching and general-purpose applications, featuring a 20V drain-source voltage rating and a continuous drain current capability of up to 5.1A at 25°C.
Key electrical characteristics include a low drain-source on-resistance (Rds(on)) as low as 0.027Ω at a gate-source voltage (Vgs) of 4.5V. The device has a gate threshold voltage (Vgs(th)) of 0.45V (min) and a maximum gate-source voltage of ±8V. Dynamic characteristics such as gate charge (Qg) are typically 13.5 nC at 4.5V Vgs.
This MOSFET is housed in a compact 6-TSOP package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The device is compliant with RoHS directives and is suitable for applications requiring reliable N-channel MOSFET performance in a small footprint.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20 V.
SOT-23-6 Thin, TSOT-23-6 (6-TSOP).
-55°C to 150°C.
13.5 nC at VDS = 10 V, VGS = 4.5 V, ID = 5.1 A.
27 mΩ at VGS = 4.5 V, ID = 5.1 A.
0.45 V minimum (VDS = VGS, ID = 1 mA).