| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 0203+ | On Request | On Request |
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| Power Dissipation | |
| Tape & Reel | |
| Technology |
The SI3460DV-T1 is an N-Channel MOSFET manufactured by Vishay, designed for various electronic applications. It offers a Drain-Source Voltage (Vdss) of 20V and a Continuous Drain Current (Id) of 5.1A at 25°C.
This MOSFET utilizes TrenchFET® technology and is housed in a SOT-23-6 Thin, TSOT-23-6 package, suitable for surface mount configurations. The operating temperature range is from -55°C to 150°C (TJ), and it has a maximum power dissipation of 1.1W (Ta).
Key electrical characteristics include a low Rds On (Max) of 27 mOhm at 5.1A and 4.5V, a gate charge (Qg) of 20nC at 4.5V, and a maximum gate-source voltage (Vgs) of ±8V. The drive voltage required is 1.8V for minimum Rds On.
This component is RoHS compliant and comes in a Digi-Reel® package with 45000 pieces per reel.
The Drain-Source Voltage (Vdss) is 20V.
The Continuous Drain Current (Id) at 25°C is 5.1A.
The Rds On (Max) is 27 mOhm at 5.1A and 4.5V.
The operating temperature range is -55°C to 150°C.
The SI3460DV-T1 is in a SOT-23-6 Thin, TSOT-23-6 package.
Yes, the SI3460DV-T1 is RoHS3 Compliant and Lead free.