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600 pcs
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600 pcs | On Request | 1 | On Request | On Request | 0203+ | On Request | On Request |
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The SI3460DV-T1 from Vishay is an N-Channel MOSFET belonging to the TrenchFET® technology family. This component is designed for surface mount applications and comes in a compact SOT-23-6 Thin, TSOT-23-6 package. It offers a drain-source voltage (Vdss) of 20V and can handle a continuous drain current (Id) of up to 5.1A at 25°C. The on-resistance (Rds On) is specified as a maximum of 27 mOhm at 5.1A and 4.5V gate-source voltage. The operating temperature range for this MOSFET is from -55°C to 150°C.
Key electrical characteristics include a gate charge (Qg) of 20nC at 4.5V and a maximum gate-source voltage (Vgs) of ±8V. The power dissipation is rated at 1.1W at 25°C ambient temperature. This device is RoHS3 compliant and lead-free.
This MOSFET is suitable for applications requiring efficient switching and low on-resistance. Its surface mount package makes it ideal for space-constrained designs in consumer electronics, industrial controls, and power management circuits.
The drain-source voltage rating is 20V.
The SI3460DV-T1 is available in SOT-23-6 Thin and TSOT-23-6 surface-mount packages.
-55°C to 150°C (junction).
5.1A at ambient temperature 25°C.
27mOhm at 5.1A and 4.5V gate drive.
TrenchFET technology.
20nC at 4.5V gate voltage.