| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,154 pcs
|
1154 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The SI3460DV-T1 from Vishay Dale is an N-Channel MOSFET designed for various electronic applications. It offers a Drain-Source Voltage (Vdss) of 20V and a Continuous Drain Current (Id) of 5.1A at 25°C.
This MOSFET utilizes TrenchFET® technology and is suitable for surface mounting, with its package/case identified as SOT-23-6 Thin or TSOT-23-6. The device operates within a temperature range of -55°C to 150°C (TJ).
Key electrical characteristics include a maximum Rds On of 27 mOhm at 5.1A and 4.5V, a Gate Charge (Qg) of 20nC at 4.5V, and a Gate-Source Voltage (Vgs) maximum of ±8V. The power dissipation is rated at 1.1W (Ta).
This component is supplied in a tape and reel package, with a standard package quantity of 45000 pieces. It is also noted as Lead-free and RoHS Compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage (Vdss) for the SI3460DV-T1 is 20V.
The Continuous Drain Current (Id) at 25°C is 5.1A.
The Rds On (Max) is 27 mOhm when measured at 5.1A and 4.5V.
The operating temperature range is -55°C to 150°C (TJ).
The SI3460DV-T1 is available in a Surface Mount package, specifically SOT-23-6 Thin or TSOT-23-6.
Yes, the SI3460DV-T1 is Lead free and RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.