| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
602,667 pcs
|
602667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI3460DDV-T1-GE3 is an N-Channel MOSFET manufactured by Vishay Siliconix. This component is designed for surface mount applications and comes in a SOT-23-6 Thin, TSOT-23-6 package.
Key electrical specifications include a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 7.9A at a case temperature. The gate charge (Qg) is a maximum of 18 nC at 8V, and the input capacitance (Ciss) is 666 pF at 10V. The on-resistance (Rds On) is a maximum of 28 mOhm at 5.1A and 4.5V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 250µA.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is suitable for various electronic designs requiring efficient switching and power management. The surface mount package facilitates integration into compact circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V maximum.
SOT-23-6 Thin, TSOT-23-6, with supplier device package 6-TSOP.
-55°C to 150°C junction temperature.
1V maximum at 250µA drain current.
28mOhm maximum at 5.1A drain current and 4.5V gate-source voltage.
18nC maximum at 8V gate-source voltage.