| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,333 pcs
|
5333 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI3460BDV-T1-E3 is an N-Channel MOSFET designed for load switching applications in portable devices and low voltage buses. It features a drain-source breakdown voltage of 20V and a continuous drain current of 8A at 25°C case temperature.
Key electrical characteristics include a low on-state resistance of 27mOhm at 5.1A and 4.5V Vgs, and a gate charge of 24nC at 8V Vgs. The device operates within a temperature range of -55°C to 150°C.
This MOSFET is housed in a compact 6-TSOP surface mount package, making it suitable for space-constrained designs. It also offers a typical gate-source threshold voltage of 0.45V and a maximum power dissipation of 3.5W at 25°C case temperature.
The SI3460BDV-T1-E3 is compliant with RoHS3 standards and is halogen-free, making it suitable for various environmental requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 20 V.
The maximum continuous drain current is 8 A.
The Rds On resistance is 27 mOhm at 5.1A and 4.5V Vgs.
The operating temperature range is -55°C to 150°C.
It is available in a 6-TSOP surface mount package.
Yes, it is RoHS3 Compliant.
Yes, it is Halogen-free.