| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,900 pcs
|
2900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI3460BDV-T1-BE3 is an N-Channel MOSFET designed for load switch applications in portable and low voltage bus systems. It features a 20V drain-source breakdown voltage and a continuous drain current capability of up to 8A (Tc) or 6.7A (Ta).
This MOSFET exhibits low on-state resistance, with a maximum of 27mOhm at 4.5V Vgs and 5.1A Id. The gate charge (Qg) is typically 9nC at 4.5V Vgs. It operates within a temperature range of -55°C to 150°C (TJ).
The device is housed in a 6-TSOP surface mount package. It is compliant with RoHS 3 standards and is halogen-free. The operating temperature range is -55°C to 150°C.
Key electrical parameters include a gate-source voltage (Vgs) of ±8V and a gate-source threshold voltage (Vgs(th)) of 1V at 250µA. Power dissipation is rated at 3.5W (Tc) and 2W (Ta).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 20V.
The maximum continuous drain current is 8A at 25°C (Tc) and 6.7A at 25°C (Ta).
The Rds On (Max) is 0.027 Ohm at 5.1A and 4.5V Vgs.
The operating junction and storage temperature range is -55°C to 150°C.
The device is in a 6-TSOP package.
Yes, it is RoHS 3 compliant.
Yes, it is halogen-free.