SI3459DV-T1-E3 The Vishay Dale SI3459DV-T1-E3 is a P-Channel MOSFET with a 60V drain-source voltage and a continuous drain current of 2.2A. It is housed in a 6-TSOP package.
Mfr Part #:

SI3459DV-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3459DV-T1-E3 is a P-Channel MOSFET with a 60V drain-source voltage and a continuous drain current of 2.2A. It is housed in a 6-TSOP package.
✓ Total Stock: 3,426 pcs
$ Price Range: $0.99

SI3459DV-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 1044 On Request On Request
Non-Authorised Inventory information
426 pcs
426 pcs On Request 1 On Request On Request 12+ On Request On Request

SI3459DV-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3459DV-T1-E3 Description

Short technical summary and product information.

The SI3459DV-T1-E3 from Vishay Dale is a P-Channel MOSFET designed for various electronic applications. It features a drain-to-source voltage (Vdss) of 60V and can handle a continuous drain current (Id) of 2.2A at 25°C (Tc).

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 220mOhm at 2.2A and 10V, a gate threshold voltage (Vgs(th)) of 1V minimum at 250µA, and a gate charge (Qg) of 14nC maximum at 10V. The device supports drive voltages between 4.5V and 10V, with a maximum gate-source voltage (Vgs) of ±20V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2W (Ta). It is supplied in a surface-mount 6-TSOP package, also known as SOT-23-6 Thin or TSOT-23-6.

 

The SI3459DV-T1-E3 is RoHS3 compliant, has an MSL of 1, and is REACH unaffected. Its TrenchFET technology offers efficient power management capabilities.

SI3459DV-T1-E3 Quick Information

Product Type: MOSFET
Series: TrenchFET®
Canonical Name: Vishay Dale SI3459DV-T1-E3 P-Channel MOSFET
Subcategory: FETs, MOSFETs - Single

SI3459DV-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3459DV-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3459DV-T1-E3 Features

  • P-Channel MOSFET with 60V drain-source voltage.
  • Continuous drain current of 2.2A at 25°C.
  • Low Rds On of 220mOhm at 2.2A, 10V.
  • Gate charge is 14nC maximum at 10V.
  • Operates from -55°C to 150°C junction temperature.

SI3459DV-T1-E3 Applications

  • Suitable for power switching applications.
  • Ideal for low-voltage DC-DC converters.
  • Used in battery management systems.
  • Applicable in load switch circuits.

SI3459DV-T1-E3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI3459DV-T1-E3?

The drain-to-source voltage (Vdss) is 60V.

What is the maximum continuous drain current?

The continuous drain current (Id) is 2.2A at 25°C case temperature.

What is the on-resistance of this MOSFET?

The maximum Rds(on) is 220mOhm at 2.2A drain current and 10V gate drive.

What package does the SI3459DV-T1-E3 come in?

It is supplied in a SOT-23-6 Thin (TSOT-23-6) surface-mount package, also known as 6-TSOP.

What is the operating temperature range?

The junction operating temperature range is -55°C to 150°C.

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