SI3459BDV-T1-GE3 The Vishay Dale SI3459BDV-T1-GE3 is a P-Channel MOSFET with a 60V Drain-Source Voltage rating. It is designed for load switching applications and comes in a 6-TSOP package.
Mfr Part #:

SI3459BDV-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3459BDV-T1-GE3 is a P-Channel MOSFET with a 60V Drain-Source Voltage rating. It is designed for load switching applications and comes in a 6-TSOP package.
✓ Total Stock: 356,833 pcs
$ Price Range: $0.99

SI3459BDV-T1-GE3 Available from 3 distributors

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352,020 pcs
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245 pcs
245 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

SI3459BDV-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3459BDV-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI3459BDV-T1-GE3 is a P-Channel MOSFET designed for load switching applications. It features a Drain-Source Voltage (Vdss) of 60V and a maximum continuous drain current of 2.9A at 25°C (Tc). The Rds On is specified at a maximum of 216mOhm at 10V Vgs and 2.2A Id.

 

This MOSFET utilizes TrenchFET technology and is 100% Rg tested. It operates within a junction temperature range of -55°C to +150°C. The device is housed in a compact SOT-23-6 Thin, TSOT-23-6 package, suitable for surface mounting.

 

Key electrical characteristics include a Gate-Source Voltage (Vgs) of ±20V and a Gate Threshold Voltage (Vgs(th)) of 3V at 250µA. The input capacitance (Ciss) is 350pF at 30V, and the typical gate charge (Qg) is 4.4nC at 10V Vgs.

 

With a maximum power dissipation of 3.3W (Tc) at 25°C, the SI3459BDV-T1-GE3 offers efficient performance for various electronic designs. It is available in lead-free and halogen-free configurations.

SI3459BDV-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI3459BDV-T1-GE3 P-Channel 60V MOSFET
Subcategory: P-Channel

SI3459BDV-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3459BDV-T1-GE3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3459BDV-T1-GE3 Features

  • P-Channel 60V MOSFET for load switching.
  • Low Rds On of 216mOhm at 10V Vgs.
  • Surface mount 6-TSOP package.
  • Wide operating temperature range.
  • TrenchFET power MOSFET technology.

SI3459BDV-T1-GE3 Applications

  • Ideal for load switch applications.
  • Suitable for power management circuits.
  • Used in battery-powered devices.
  • General purpose switching tasks.

SI3459BDV-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the Drain-Source Voltage (Vdss) for the SI3459BDV-T1-GE3?

The Drain-Source Voltage (Vdss) is 60V.

What is the maximum continuous drain current?

The maximum continuous drain current is 2.9A at 25°C (Tc).

What is the Rds On (Max) at Vgs = 10V?

The Rds On (Max) is 216mOhm at 10V Vgs and 2.2A Id.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the SI3459BDV-T1-GE3 in?

It is in a SOT-23-6 Thin, TSOT-23-6 package.

Is this MOSFET RoHS compliant?

The RoHS Status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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