| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,220 pcs
|
13220 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
6,186 pcs
|
6186 pcs | On Request | 1 | On Request | On Request | 12+/13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI3459BDV-T1-E3 is a P-Channel MOSFET designed for load switching applications. It features a TrenchFET power MOSFET technology and offers a drain-source voltage of 60V.
Key electrical characteristics include a maximum continuous drain current of 2.9A at 25°C (Tc) and a maximum on-resistance of 216mOhm at 10V Vgs. The device operates within a temperature range of -55°C to 150°C (TJ).
This MOSFET is housed in a 6-TSOP package and is suitable for surface mounting. It is rated for a maximum power dissipation of 3.3W at 25°C (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is -60V.
The device is available in a 6-TSOP (TSOT-23-6) surface mount package.
The operating junction temperature range is -55°C to 150°C.
The maximum on-resistance is 216 mOhm at Vgs = -10V and Id = -2.9A.
The maximum gate threshold voltage is 3V at Id = -250µA.
The maximum gate charge is 12 nC at Vgs = 10V.
The maximum input capacitance is 350 pF at Vds = 30V.