| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
309 pcs
|
309 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI3458BDV-T1-GE3 is a single N-Channel MOSFET from the Transistors - FETs, MOSFETs - Single category. It features a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current of 4.1A (Tc).
The MOSFET has a low on-resistance (Rds On) of 100mOhm at 3.2A and 10V, with a gate threshold voltage (Vgs(th)) of 3V at 250µA. It operates within a temperature range of -55°C to 150°C (TJ).
Packaged in a SOT-23-6 Thin, TSOT-23-6, this device is suitable for surface mount applications. The technology used is MOSFET (Metal Oxide), and it supports drive voltages up to 4.5V and 10V.
Key electrical characteristics include an input capacitance (Ciss) of 350pF at 30V and a gate charge (Qg) of 11nC at 10V. The maximum power dissipation is rated at 2W (Ta) and 3.3W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60 V.
It is available in a SOT-23-6 Thin (TSOT-23-6) surface-mount package, with a supplier device package of 6-TSOP.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage (Vgs(th)) is 3 V at 250 µA drain current.
The maximum on-resistance (Rds(on)) is 100 mOhm at 3.2 A drain current and 10 V gate voltage.
The maximum continuous drain current is 4.1 A at case temperature (Tc).