SI3458BDV-T1-E3 The Vishay Dale SI3458BDV-T1-E3 is an N-Channel MOSFET designed for various applications. It features a 60V drain-source voltage and a continuous drain current of 4.1A.
Mfr Part #:

SI3458BDV-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3458BDV-T1-E3 is an N-Channel MOSFET designed for various applications. It features a 60V drain-source voltage and a continuous drain current of 4.1A.
✓ Total Stock: 107 pcs
$ Price Range: $0.99

SI3458BDV-T1-E3 Available from 1 distributor

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✓ Non-Authorised
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107 pcs
107 pcs On Request 1 On Request On Request 14+ On Request On Request

SI3458BDV-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3458BDV-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI3458BDV-T1-E3 is an N-Channel MOSFET with a Metal Oxide semiconductor technology. It offers a drain-to-source voltage (Vdss) of 60V and a continuous drain current of 4.1A at a case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 100mOhm at 3.2A and 10V, a gate threshold voltage (Vgs(th)) of 3V at 250µA, and a maximum gate-to-source voltage (Vgs) of ±20V. The input capacitance (Ciss) is 350pF at 30V, and the total gate charge (Qg) is 11nC at 10V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2W (Ta) or 3.3W (Tc). It is housed in a SOT-23-6 Thin, TSOT-23-6 package, also referred to as a 6-TSOP, and is designed for surface mounting.

 

The component is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected. It is suitable for applications requiring efficient switching and power control.

SI3458BDV-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI3458BDV-T1-E3 N-Channel MOSFET
Subcategory: N-Channel

SI3458BDV-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3458BDV-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3458BDV-T1-E3 Features

  • N-Channel MOSFET with 60V drain-source voltage.
  • 4.1A continuous drain current capability.
  • Low on-resistance of 100mOhm at 3.2A, 10V.
  • Surface mount SOT-23-6 (TSOT-23-6) package.
  • RoHS3 compliant and MSL 1 rated.

SI3458BDV-T1-E3 Applications

  • Ideal for power switching circuits.
  • Suitable for DC-DC converters.
  • Used in battery management systems.
  • Applicable for load switching.

SI3458BDV-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SI3458BDV-T1-E3?

The drain-to-source voltage (Vdss) for the SI3458BDV-T1-E3 is 60V.

What is the maximum continuous drain current?

The maximum continuous drain current is 4.1A.

What is the Rds On at specified conditions?

The Rds On is a maximum of 100mOhm at 3.2A and 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI3458BDV-T1-E3 in?

It is in a SOT-23-6 Thin, TSOT-23-6 package, also known as a 6-TSOP.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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