| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,009 pcs
|
2009 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Tape & Reel | |
| Technology |
The SI3457DV-T1 from Siliconix is a P-Channel MOSFET designed for various electronic applications. It offers a maximum drain-source voltage of 30V and a continuous drain current of 4.3A. The MOSFET features a low Rds On of 65 mOhms at a gate-source voltage of 10V and a drain current of 4.3A, indicating efficient power handling.
This component employs TrenchFET technology, known for its low on-resistance and improved performance. It operates within a temperature range of -55°C to +150°C. The device is supplied in a TSOP-6 surface-mount package, typically on a reel with a standard quantity of 3000 units.
Key electrical characteristics include a gate-source voltage rating of ±20V and a maximum power dissipation of 2W. Switching characteristics such as rise time, fall time, and turn-on delay are typically 11ns, 11ns, and 30ns respectively. These specifications make the SI3457DV-T1 suitable for applications requiring efficient switching and power management.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
TSOP-6.
-55°C to +150°C.
65 mOhm at 4.3A, 10V.
4.3 A.
±20 V.
Rise time 11 ns, fall time 11 ns, turn-on delay 30 ns.