SI3457CDV-T1-GE3 The Vishay Dale SI3457CDV-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage rating and a continuous drain current of 5.1A. It features a low on-resistance of 74mΩ at 10V gate-source voltage.
Mfr Part #:

SI3457CDV-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3457CDV-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage rating and a continuous drain current of 5.1A. It features a low on-resistance of 74mΩ at 10V gate-source voltage.
✓ Total Stock: 307,059 pcs
$ Price Range: $0.99

SI3457CDV-T1-GE3 Available from 5 distributors

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SI3457CDV-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Failure Rate
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Number of Channels
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3457CDV-T1-GE3 Description

Short technical summary and product information.

This Vishay Dale SI3457CDV-T1-GE3 is a P-Channel MOSFET designed for load switching applications. It offers a drain-source breakdown voltage of 30V and a continuous drain current of up to 5.1A at 25°C case temperature.

 

The MOSFET exhibits a maximum on-resistance of 74mΩ when driven at 10V gate-source voltage and 4.1A drain current. The gate charge is typically 5.1nC. It operates within a junction temperature range of -55°C to +150°C.

 

Packaged in a 6-TSOP surface mount configuration, this component is suitable for various electronic designs. The device is categorized under MOSFET technology and features a TrenchFET design for enhanced performance.

 

Key electrical parameters include a gate-source voltage rating of ±20V and a gate-source threshold voltage of -1V. The input capacitance is rated at 450pF at 15V drain-source voltage.

SI3457CDV-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si3
Canonical Name: Vishay Dale SI3457CDV-T1-GE3 P-Channel 30V 5.1A MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

SI3457CDV-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3457CDV-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3457CDV-T1-GE3 Features

  • P-Channel 30V MOSFET for load switching.
  • Low on-resistance of 74mΩ at 10V Vgs.
  • Continuous drain current up to 5.1A.
  • Surface mount 6-TSOP package.
  • Operates from -55°C to +150°C.

SI3457CDV-T1-GE3 Applications

  • Suitable for load switching circuits.
  • Designed for power management applications.
  • Used in general purpose switching tasks.
  • Ideal for compact electronic designs.

SI3457CDV-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SI3457CDV-T1-GE3?

The minimum drain-source breakdown voltage is -30V (VGS = 0V, ID = -250 μA).

What package options are available for the SI3457CDV-T1-GE3?

Available in TSOP-6 and SOT-23-6 Thin, TSOT-23-6 packages.

What is the operating temperature range?

-55°C to +150°C (junction and storage).

What is the typical gate charge of this MOSFET?

Typical 5.1 nC. Maximum 15 nC at Vgs = 10V.

What is the maximum on-resistance?

0.074Ω at VGS = -10V and 0.113Ω at VGS = -4.5V.

What is the continuous drain current rating?

Maximum -5.1A at TC = 25°C.

What is the gate-source threshold voltage?

Nominal -1V; maximum 3V (Id = -250µA).

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