SI3457BDV-T1-E3 The Vishay Dale SI3457BDV-T1-E3 is a P-Channel MOSFET designed for surface mount applications. It features a 30V drain-to-source voltage and a continuous drain current of 3.7A.
Mfr Part #:

SI3457BDV-T1-E3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3457BDV-T1-E3 is a P-Channel MOSFET designed for surface mount applications. It features a 30V drain-to-source voltage and a continuous drain current of 3.7A.
✓ Total Stock: 303,465 pcs
$ Price Range: $0.99

SI3457BDV-T1-E3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI3457BDV-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3457BDV-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI3457BDV-T1-E3 is a P-Channel MOSFET with a drain-to-source voltage rating of 30V and a maximum continuous drain current of 3.7A. It offers a low on-resistance of 54mOhm at 5A and 10V Vgs, with a gate charge of 19nC at 10V.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a compact SOT-23-6 Thin, TSOT-23-6 package, suitable for surface mounting.

 

The device is specified with a gate threshold voltage of 3V at 250µA and a maximum gate-to-source voltage of ±20V. Its power dissipation is rated at 1.14W at ambient temperature.

 

Compliance information indicates RoHS3 compliance and MSL 1 rating. The REACH status is unaffected.

SI3457BDV-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI3457BDV-T1-E3 P-Channel MOSFET
Subcategory: Single

SI3457BDV-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3457BDV-T1-E3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3457BDV-T1-E3 Features

  • 30V drain-to-source voltage rating.
  • 3.7A maximum continuous drain current.
  • Low 54mOhm on-resistance at 10V.
  • Surface mount SOT-23-6 package.
  • Operates from -55°C to 150°C.

SI3457BDV-T1-E3 Applications

  • Suitable for power switching applications.
  • Ideal for battery-powered devices.
  • Used in portable electronics.
  • General purpose MOSFET applications.

SI3457BDV-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SI3457BDV-T1-E3?

The drain-to-source voltage (Vdss) is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 3.7A.

What is the on-resistance of this MOSFET?

The on-resistance (Rds On) is a maximum of 54mOhm at 5A and 10V Vgs.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the SI3457BDV-T1-E3 in?

It is available in a SOT-23-6 Thin, TSOT-23-6 package.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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