| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,985 pcs
|
8985 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,300 pcs
|
4300 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The Vishay Dale SI3456DV-T1-E3 is an N-Channel MOSFET designed for various electronic applications. It features a Drain-Source Voltage (VDS) of 30V and a Gate-Source Voltage (VGS) of ±20V.
Key electrical characteristics include a continuous drain current (ID) of 5.1A at 25°C, which reduces to 4.1A at 70°C. The pulsed drain current (IDM) is rated at 20A. The device exhibits a low on-state drain resistance (rDS(on)) of 0.035 Ohms at VGS = 10V and 0.052 Ohms at VGS = 4.5V. The gate threshold voltage (VGS(th)) is typically 3.0V.
Dynamic characteristics include a total gate charge (Qg) of 13nC at VGS = 10V and 9nC at VGS = 5V. Switching times are also specified, with a turn-on time of 15ns and a turn-off time of 40ns.
This MOSFET is housed in a TSOP-6 package, suitable for surface mounting. The operating and storage temperature range is from -55°C to 150°C. The device is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
TSOP-6.
-55 to 150 °C.
3.0V typical.
0.028Ω typical, 0.035Ω maximum.
5.1A.