| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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740 pcs
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740 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The Vishay Dale SI3456DV-T1 is an N-Channel MOSFET designed for various electronic applications. It offers a Drain-Source Voltage of 30V and a Continuous Drain Current of up to 6A at 25°C.
Key electrical characteristics include a typical Gate-Threshold Voltage of 2V and a low Drain-Source On-Resistance of 0.035 Ohms at VGS = 10V. The device also features a typical Total Gate Charge of 13nC.
This MOSFET is housed in a TSOP-6 package, suitable for surface mount applications. It operates within a junction temperature range of -55°C to 150°C and has a maximum junction-to-ambient thermal resistance of 62.5 °C/W.
The SI3456DV-T1 is RoHS3 Compliant, indicating adherence to environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V
TSOP-6
-55°C to 150°C
6A at 25°C ambient, 4.8A at 70°C
0.028Ω at VGS=10V, maximum 0.035Ω
1.0V minimum, 3.0V maximum
8.6nC typical at VGS=10V