| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
258,286 pcs
|
258286 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI3456DDV-T1-E3 is an N-Channel MOSFET manufactured by Vishay Dale. It features a drain-source breakdown voltage of 30V and a continuous drain current of 6.3A at a case temperature of 25°C. The device has a low on-resistance of 40mOhm at 10V gate drive, making it suitable for efficient power switching.
Thermal characteristics include a maximum power dissipation of 2.7W at Tc=25°C and an operating junction temperature range of -55°C to +150°C. The MOSFET is offered in a 6TSOP surface-mount package, which is designed for compact PCB layouts.
Electrical parameters such as input capacitance (325pF at 15V) and gate charge (9nC at 10V) provide insight into switching performance. The part is suitable for low-voltage DC-DC converters, load switches, and battery management applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
6.3A at Tc=25°C.
40mOhm at 5A, 10V.
-55°C to +150°C.
9nC at 10V.
6TSOP.
2.7W at Tc=25°C.