| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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This Vishay Dale SI3456BDV-T1-GE3 is an N-Channel MOSFET designed for surface mount applications. It offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 4.5A at 25°C ambient temperature. The MOSFET has a maximum on-resistance (Rds On) of 35mOhm when driven at 10V with 6A current.
Key electrical characteristics include a gate charge (Qg) of 13 nC at 10V and a maximum gate-source voltage (Vgs) of ±20V. The gate threshold voltage (Vgs(th)) is 3V maximum at 250µA. The device operates within a temperature range of -55°C to 150°C (TJ).
Packaged in a SOT-23-6 Thin, TSOT-23-6 (6-TSOP) package, this MOSFET is suitable for various electronic designs requiring efficient switching and power management. It is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the SI3456BDV-T1-GE3 is 30V.
The maximum continuous drain current (Id) at 25°C for the SI3456BDV-T1-GE3 is 4.5A.
The operating temperature range for the SI3456BDV-T1-GE3 is -55°C to 150°C (TJ).
The SI3456BDV-T1-GE3 is supplied in a SOT-23-6 Thin, TSOT-23-6 package, also referred to as 6-TSOP.
Yes, the SI3456BDV-T1-GE3 is RoHS3 Compliant.