SI3456BDV-T1-E3 This Vishay Dale SI3456BDV-T1-E3 is an N-Channel MOSFET designed for surface mount applications. It features a 30V drain-to-source voltage and a continuous drain current of 4.5A.
Mfr Part #:

SI3456BDV-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
This Vishay Dale SI3456BDV-T1-E3 is an N-Channel MOSFET designed for surface mount applications. It features a 30V drain-to-source voltage and a continuous drain current of 4.5A.
✓ Total Stock: 1,880 pcs
$ Price Range: $0.99

SI3456BDV-T1-E3 Available from 1 distributor

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✓ Non-Authorised
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1,880 pcs
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SI3456BDV-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3456BDV-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI3456BDV-T1-E3 is a single N-Channel MOSFET with a drain-to-source voltage (Vdss) of 30V. It is designed for surface mount applications and comes in a 6-TSOP package, also known as SOT-23-6 Thin.

 

This MOSFET offers a continuous drain current of 4.5A at ambient temperature (Ta) and a maximum on-resistance (Rds On) of 35mOhm at 6A and 10Vgs. The gate charge (Qg) is 13nC at 10Vgs, and the gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA. It operates within a temperature range of -55°C to 150°C (TJ).

 

With a power dissipation of 1.1W (Ta), this component is suitable for various power management and switching applications. The ±20V maximum gate-source voltage (Vgs) and 4.5V/10V drive voltage specifications are important for proper circuit design.

 

This part is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1. Its REACH status is unaffected.

SI3456BDV-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI3456BDV-T1-E3 N-Channel MOSFET
Subcategory: Single

SI3456BDV-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI3456BDV-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3456BDV-T1-E3 Features

  • 30V drain-to-source voltage rating.
  • 4.5A continuous drain current.
  • 35mOhm maximum on-resistance.
  • Surface mount 6-TSOP package.
  • RoHS3 compliant component.

SI3456BDV-T1-E3 Applications

  • Ideal for power switching circuits.
  • Suitable for battery-powered devices.
  • Used in DC-DC converters.
  • Applicable in load switch designs.

SI3456BDV-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SI3456BDV-T1-E3?

The drain-to-source voltage (Vdss) for the SI3456BDV-T1-E3 is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 4.5A at ambient temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds On) is 35mOhm when the drain current is 6A and gate-source voltage is 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI3456BDV-T1-E3 in?

It is in a 6-TSOP package, also referred to as SOT-23-6 Thin.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1.

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