SI3455ADV-T1-GE3 The Vishay Dale SI3455ADV-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and 2.7A continuous drain current. It is supplied in a 6-TSOP package.
Mfr Part #:

SI3455ADV-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3455ADV-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and 2.7A continuous drain current. It is supplied in a 6-TSOP package.
✓ Total Stock: 750,000 pcs
$ Price Range: $0.99

SI3455ADV-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
750,000 pcs
750000 pcs On Request 1 On Request On Request On Request On Request On Request

SI3455ADV-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3455ADV-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI3455ADV-T1-GE3 is a P-Channel MOSFET designed for power applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 2.7A at 25°C. The device offers a low on-state resistance of 100mΩ at a gate-source voltage of -10V and a drain current of 3.5A.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a compact 6-TSOP package, suitable for surface mounting. The TrenchFET technology ensures efficient power handling.

 

Key electrical characteristics include a gate threshold voltage of 3V maximum at 250µA and a gate charge of 13nC maximum at 10V. The maximum power dissipation is rated at 1.14W at 25°C ambient temperature. This component is compliant with RoHS3 standards and is halogen-free.

SI3455ADV-T1-GE3 Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: P-Channel 30V 2.7A 6TSOP MOSFET
Subcategory: P-Channel

SI3455ADV-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3455ADV-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3455ADV-T1-GE3 Features

  • P-Channel MOSFET technology.
  • 30V drain-source voltage rating.
  • 2.7A continuous drain current.
  • Low 100mOhm Rds On.
  • Compact 6-TSOP package.

SI3455ADV-T1-GE3 Applications

  • Suitable for load switching applications.
  • Used in power management circuits.
  • Ideal for battery-powered device switching.
  • Applicable in DC-DC converter designs.

SI3455ADV-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V.

What is the package type?

SOT-23-6 Thin, TSOT-23-6, and 6-TSOP.

What is the operating temperature range?

-55°C to 150°C (junction).

What is the gate threshold voltage?

Maximum 3V at 250µA drain current.

What is the continuous drain current?

2.7A at 25°C ambient.

What is the drain-source on-resistance?

Maximum 100mΩ at 10V gate drive and 3.5A drain current.

What is the mounting type?

Surface mount.

Home
Account

Categories