| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SI3447CDV-T1-GE3 is a P-Channel MOSFET designed for various switching applications. It features a drain-source voltage (Vds) of 12V and a continuous drain current (Id) of up to 7.8A at 25°C case temperature.
This MOSFET offers a low drain-source on-state resistance (Rds(on)) as low as 0.036Ω at VGS = -4.5V and ID = -6.3A, ensuring efficient power transfer. The gate-source threshold voltage (Vgs(th)) is a maximum of 1V at 250µA, facilitating easier drive requirements.
Packaged in a compact 6-TSOP (SOT-23-6 Thin) surface-mount case, the SI3447CDV-T1-GE3 is suitable for space-constrained designs. It operates within a temperature range of -55°C to 150°C (TJ) and is compliant with RoHS directives. Its TrenchFET technology optimizes performance for applications like load switching and PA switching.
Key electrical characteristics include a gate charge (Qg) of 30nC at 8V and an input capacitance (Ciss) of 910pF at 6V. The device is rated for a maximum power dissipation of 3.0W (Tc) or 1.1W (Ta).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the SI3447CDV-T1-GE3 is 12V.
The maximum continuous drain current (Id) is 7.8A at a case temperature of 25°C.
The Rds(on) is a maximum of 0.036Ω at VGS = -4.5V and ID = -6.3A.
The operating junction and storage temperature range is -55°C to 150°C.
The SI3447CDV-T1-GE3 is supplied in a 6-TSOP (SOT-23-6 Thin) package.
Yes, the SI3447CDV-T1-GE3 is RoHS3 compliant.