| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 1034 | On Request | On Request | |
|
2,352 pcs
|
2352 pcs | On Request | 1 | On Request | On Request | 1427+ | On Request | On Request | |
|
222 pcs
|
222 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI3447BDV-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 12V and can handle a continuous drain current (Id) of up to 4.5A at ambient temperature. The MOSFET exhibits a low on-resistance (Rds On) of 40mOhm when measured at 6A drain current and 4.5V gate-source voltage.
This device operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a gate charge (Qg) of 14nC at 4.5V and a gate threshold voltage (Vgs(th)) of 1V at 250µA. The maximum gate-source voltage (Vgs) is ±8V.
The SI3447BDV-T1-E3 is packaged in a SOT-23-6 Thin, TSOT-23-6 (6-TSOP) case and is designed for surface mounting. Its power dissipation is rated at 1.1W (Ta). The component is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12V.
4.5A at ambient temperature.
40mOhm maximum at 6A drain current and 4.5V gate voltage.
1V maximum at 250µA drain current.
Surface mount 6-TSOP package (SOT-23-6 Thin, TSOT-23-6).
-55°C to 150°C junction temperature.
±8V.