| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,445 pcs
|
2445 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI3445DV-T1-E3 is a P-Channel MOSFET manufactured by Vishay Dale. It features a maximum drain-to-source voltage (Vdss) of 8V and a maximum gate-source voltage of ±8V. The gate threshold voltage is 1V at a drain current of 250µA, and the maximum gate charge is 25 nC at Vgs = 4.5V. This device is housed in a 6TSOP surface-mount package, suitable for compact PCB layouts. It is designed for low-voltage switching applications where efficient power management is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
8V.
±8V.
25 nC at Vgs = 4.5V.
1V at Id = 250µA.