BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,586 pcs
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2586 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The Vishay Dale SI3445DV-T1 is a P-Channel MOSFET designed for various electronic applications. It features a drain-source voltage rating of -8V and a gate-source voltage rating of ±8V. The device can handle a continuous drain current of up to -5.6A at 25°C and a pulsed drain current of -20A.
Key electrical characteristics include a low on-state drain resistance, with a maximum of 0.042Ω at VGS = -4.5V. The gate threshold voltage ranges from -0.45V to -3.0V. Dynamic parameters such as total gate charge are specified, with a maximum of 25nC.
This MOSFET is housed in a compact TSOP-6 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C and has a maximum junction-to-ambient thermal resistance of 62.5°C/W.
| Qty | Low | High |
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| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -8V.
TSOP-6 surface-mount package.
-55°C to 150°C.
The maximum continuous drain current is -5.6A at 25°C and -4.5A at 70°C.
The drain-source on-resistance is 0.042Ω at VGS=-4.5V, 0.060Ω at VGS=-2.5V, and 0.080Ω at VGS=-1.8V.
The gate threshold voltage ranges from -0.45V to -3.0V.
The turn-on time is 40ns and turn-off time is 120ns.