| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,045 pcs
|
4045 pcs | On Request | 1 | On Request | On Request | 05/6+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI3443DV is a P-Channel enhancement mode MOSFET manufactured by On Semiconductor. It is designed for low-voltage power management and load switching applications. The device features a maximum drain-source voltage of 20V and a continuous drain current rating of 4.4A at ambient temperature. With a maximum on-resistance of 65mOhm at Vgs = 4.5V and Id = 4A, it provides efficient switching performance.
The MOSFET utilizes advanced MOSFET technology and offers low gate charge (10nC max at 4.5V) and low input capacitance (640pF max at Vds = 10V), enabling fast switching with reduced drive requirements. The gate threshold voltage is 1.5V max at Id = 250µA, ensuring compatibility with low-voltage logic levels. The device supports gate drive voltages of 2.5V and 4.5V for optimized Rds(on).
The SI3443DV is supplied in a compact SOT-23-6 Thin (TSOT-23-6) surface-mount package, making it suitable for space-constrained designs. It operates over a junction temperature range of -55°C to 150°C. With a maximum power dissipation of 1.6W at ambient temperature, thermal management should be considered in high-current applications.
This P-Channel MOSFET is commonly used in battery protection circuits, power load switches and DC-DC converter applications where low voltage and low on-resistance are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 150°C junction temperature.
SOT-23-6 Thin and TSOT-23-6.
20V.
4.4A at ambient temperature.
Maximum 65mOhm at Vgs=4.5V and Id=4A.
Maximum 1.5V at Id=250µA.
1.6W at ambient temperature.