SI3443DDV-T1-GE3 The Vishay Dale SI3443DDV-T1-GE3 is a P-Channel MOSFET with a 20V Drain-Source Voltage and a maximum Rds On of 47mOhm at 4.5A, 4.5V. It is supplied in a 6-TSOP package.
Mfr Part #:

SI3443DDV-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3443DDV-T1-GE3 is a P-Channel MOSFET with a 20V Drain-Source Voltage and a maximum Rds On of 47mOhm at 4.5A, 4.5V. It is supplied in a 6-TSOP package.
✓ Total Stock: 528,771 pcs
$ Price Range: $0.99

SI3443DDV-T1-GE3 Available from 3 distributors

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✓ Non-Authorised
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516,571 pcs
516571 pcs On Request 1 On Request On Request On Request On Request On Request
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10,020 pcs
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2,180 pcs
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SI3443DDV-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3443DDV-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI3443DDV-T1-GE3 is a P-Channel MOSFET designed for various applications including DC/DC converters and load switches. It features a TrenchFET power MOSFET technology, optimized for PWM applications, and is 100% Rg tested.

 

Key electrical specifications include a Drain-Source Voltage of 20V and a maximum On-Resistance of 47mOhm at a gate-source voltage of -4.5V and a drain current of 4.5A. The continuous drain current is rated at 4A (Ta) and 5.3A (Tc). The gate charge is typically 9 nC at VGS = -4.5V.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a 6-TSOP package and utilizes surface mount technology. The device is RoHS3 compliant and halogen-free.

 

Applications for the SI3443DDV-T1-GE3 include hard disk drives, DC/DC converters, load switches, and portable devices.

SI3443DDV-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI3443DDV-T1-GE3 P-Channel 20V MOSFET
Subcategory: Single

SI3443DDV-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI3443DDV-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3443DDV-T1-GE3 Features

  • P-Channel TrenchFET power MOSFET.
  • 20V Drain-Source Voltage rating.
  • Low Rds On: 47mOhm max @ 4.5A, 4.5V.
  • Continuous current up to 5.3A (Tc).
  • 6-TSOP surface mount package.

SI3443DDV-T1-GE3 Applications

  • Suitable for DC/DC converters.
  • Used in load switch applications.
  • Ideal for portable devices.
  • Designed for hard disk drives.

SI3443DDV-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the Drain-Source Voltage for the SI3443DDV-T1-GE3?

The Drain-Source Voltage is 20V.

What is the maximum On-Resistance of the SI3443DDV-T1-GE3?

The maximum On-Resistance is 47mOhm at a drain current of 4.5A and gate-source voltage of 4.5V.

What is the continuous drain current for the SI3443DDV-T1-GE3?

The continuous drain current is 4A at 25°C (Ta) and 5.3A at 25°C (Tc).

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI3443DDV-T1-GE3 supplied in?

It is supplied in a 6-TSOP package for surface mounting.

Is the SI3443DDV-T1-GE3 RoHS compliant?

Yes, it is RoHS3 compliant.

Is the SI3443DDV-T1-GE3 halogen-free?

Yes, it is halogen-free.

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